spContent=In the teaching process of the microelectronic device course, it is the most important to make students master the basic analysis method of microelectronic devices and train students to have the ability to comprehend by analogy.
In the teaching process of the microelectronic device course, it is the most important to make students master the basic analysis method of microelectronic devices and train students to have the ability to comprehend by analogy.
—— 课程团队
课程概述
This course is a main course of Electronic Science and Technology major and Integrated Circuit Design and Integrated System major. The purpose of the course is to make students to master the basic physics principles and electrical characteristics of diodes, bipolar transistors and MOS field effect transistors. The engineers in the field of microelectronics technology must master the above content. The prerequisite course for this course is "Semiconductor Physics". This course is the prerequisite course for courses related to transistor design and simulation, integrated circuit principles, microelectronics technology, integrated circuit manufacturing technology, etc.
授课目标
The purpose of the course is to make students to master the basic physics principles and electrical characteristics of diodes, bipolar transistors and MOS field effect transistors.
课程大纲
1st week
Chapter 1 Fundamental equation of semiconductor devices
Chapter 2 PN junctions
2.1 Space Charge region and built-in potential of the PN junction at equilibrium
2.2 Electric field distribution and width of space charge region of the PN Junction at equilibrium
2nd week
2.3 energy band diagram and carrier distribution of space charge region of the PN Junction at equilibrium
2.4 motion of carriers of the PN junction under bias
3rd week
2.5 Current-voltage characteristics of ideal PN junction
2.6 Generation and recombination current in PN junction
4th week
2.7 Quasi-fermi level and non-Equilibrium energy band diagram
2.8 High injection condition
2.9 Junction breakdown
5th week
2.10 Junction capacity
2.11 Diffusion capacity
2.12 Transient effects
6th week
Chapter 3 Bipolar transistor
3.1 Basic characteristics
3.2 Current gain of uniform-base bipolar transistor
7th week
3.3 Current gain of graded-base bipolar transistor
8th week
3.4 output characteristics of bipolar transistor
9th week
3.5 reverse characteristics
3.6 base resistance
10th week
3.7 Frequency response of the current gain
3.8 Small-signal equivalent circuits
3.9 Power gain and maximum oscillation frequency
11st week
Chapter 4 MOSFET
4.1 Basic characteristics
4.2 Threshold voltage for MOSFETs
12nd week
4.3 output characteristics
4.4 Subthreshold characteristics
4.5 DC characteristics and temperature characteristics
13rd week
4.6 Small-signal equivalent circuits
4.7 Short-channel effects
4.8 Development of MOSFETs
展开全部
预备知识
The prerequisite course for this course is "Semiconductor Physics".
参考资料
1、Microelectric devices (Fourth edition), Xingbi Chen, Yong Chen, Jizhi Liu, Min Ren. Publishing House of Electronics Industry, 2018.
2、Semiconductor-Device Electronics, R. M. Warner, B. L. Grung. Oxford University Press, Inc, 1991.
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